Products specifications
Attribute nameAttribute value
Depth0.0965"
Row cycle time45.75 ns
Refresh row cycle time350 ns
Width2.74"
Height1.18"
Doesn't containHalogen
Row active time32 ns
Programming power voltage (VPP)2.5 V
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Features
Internal memory4 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 4 GB
Memory ranking1