Depth | 0.0965" |
Row cycle time | 45.75 ns |
Refresh row cycle time | 350 ns |
Width | 2.74" |
Height | 1.18" |
Doesn't contain | Halogen |
Row active time | 32 ns |
Programming power voltage (VPP) | 2.5 V |
Sustainability certificates | RoHS |
Operating temperature (T-T) | 0 - 85 °C |
Storage temperature (T-T) | -55 - 100 °C |
Internal memory | 4 GB |
Internal memory type | DDR4 |
Memory clock speed | 2666 MHz |
Component for | Notebook |
Memory form factor | 260-pin SO-DIMM |
Buffered memory type | Unregistered (unbuffered) |
CAS latency | 19 |
Memory voltage | 1.2 V |
Memory layout (modules x size) | 1 x 4 GB |
Memory ranking | 1 |