Kingston Technology KSM26RD8L/16MEI memory module 16 GB 1 x 16 GB DDR4 2666 MHz ECC

Kingston Technology KSM26RD8L/16MEI. Component for: PC/server, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 288-pin DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
Availability: Out of Stock - on backorder and will be dispatched once in stock.
SKU: 5162241
Manufacturer part number: KSM26RD8L/16MEI
MSRP: $155.00
$117.91
Kingston's KSM26RD8L/16MEI is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx8, ECC, VLP (very low profile) memory module, based on eighteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM26RD8L/16MEI is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx8, ECC, VLP (very low profile) memory module, based on eighteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Products specifications
Attribute nameAttribute value
Height0.738"
Row cycle time45.75 ns
Refresh row cycle time350 ns
Width5.25"
JEDEC standardY
Lead platingGold
Row active time32 ns
Programming power voltage (VPP)2.5 V
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Features
Compatible productsAcer - Veriton P330 F4 Supermicro - A2SD1-3750F Motherboard Supermicro - A2SD1-3955F Motherboard Supermicro - SuperBlade SBI-4429P-T2N (Super B11DPT-P) Supermicro - SuperBlade SBI-6129P-C3N (Super B11DPE) Supermicro - SuperBlade SBI-6129P-T3N (Super B11DPE) Supermicro - SuperBlade SBI-6419P-C3N (Super B11SPE-CPU-TF) Supermicro - SuperBlade SBI-6429P-C3N (Super B11DPE) Supermicro - SuperBlade SBI-6429P-T3N (Super B11DPE) Supermicro - SuperServer 5039MA8-H12RFT (Super A2SD1-3750F)
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
Buffered memory typeRegistered (buffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 16 GB
Memory ranking2
Module configuration2048M x 72
Product tags
  • (57679)