Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MHz ECC1

Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MHz ECC

Kingston Technology KSM32SES8/16MF. Component for: Notebook, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22, ECC

Manufacturer: Kingston Technology

Availability: Out of Stock - on backorder and will be dispatched once in stock.

SKU: 6671330

Manufacturer part number: KSM32SES8/16MF

MSRP: $96.00

Price: $72.54

Qty:

Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.

Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported

Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported

Products specifications

Attribute name	Attribute value
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Width	2.74"
Depth	0.146"
Height	1.18"
JEDEC standard	Y
Lead plating	Gold
Doesn't contain	Halogen
Harmonized System (HS) code	84733020
Row active time	32 ns
SPD profile	Y
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	16 GB
Internal memory type	DDR4
Memory clock speed	3200 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
ECC	Y
Buffered memory type	Unregistered (unbuffered)
CAS latency	22
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 16 GB
Memory ranking	1
Module configuration	2048M x 72

Product tags

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