Transcend MTE662T2 M.2 1000 GB PCI Express 3.0 3D NAND NVMe

Transcend MTE662T2. SSD capacity: 1000 GB, SSD form factor: M.2, Read speed: 3500 MB/s, Write speed: 2700 MB/s, Component for: PC/notebook
Manufacturer: Transcend
Availability: Out of Stock - on backorder and will be dispatched once in stock.
SKU: 6626447
Manufacturer part number: TS1TMTE662T2
MSRP: $239.00
$212.04
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

 

  • DRAM Cache embedded
  • 30µ" PCB gold finger
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • PCIe Gen 3 x4 interface
  • Key components fortified by default with Corner Bond technology
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.3
  • Supports NVM command
  • SLC caching technology
  • Built-in LDPC ECC (Error Correction Code) functionality
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

 

  • DRAM Cache embedded
  • 30µ" PCB gold finger
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • PCIe Gen 3 x4 interface
  • Key components fortified by default with Corner Bond technology
  • Compliant with PCI Express specification 3.1
  • Compliant with NVM Express specification 1.3
  • Supports NVM command
  • SLC caching technology
  • Built-in LDPC ECC (Error Correction Code) functionality
Products specifications
Attribute nameAttribute value
Width3.15"
Depth0.866"
Height0.141"
Weight0.317 oz
PCI Express interface data lanesx4
TBW rating4400
NVMe version1.3
Technical details
Sustainability certificatesRoHS
Ports & interfaces
InterfacePCI Express 3.0
Design
CertificationCE, FCC, BSMI
Operational conditions
Minimum operating temperature-20 °C
Maximum operating temperature75 °C
Operating temperature (T-T)-20 - 75 °C
Storage temperature (T-T)-55 - 85 °C
Operating shock1500 G
Operating vibration20 G
Power
Power consumption (sleep)1 W
Operating voltage3.3 V
Features
Random read (4KB)340000 IOPS
Random write (4KB)355000 IOPS
Read speed3500 MB/s
Write speed2700 MB/s
Component forPC/notebook
ECCY
Mean time between failures (MTBF)3000000 h
SSD capacity1000 GB
Memory type3D NAND
NVMeY
SSD form factorM.2
Product tags
  • (58544)