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Transcend TS4GSH64V6E memory module 32 GB 2 x 8 GB DDR4 2666 MHz1
Transcend TS4GSH64V6E memory module 32 GB 2 x 8 GB DDR4 2666 MHz1 Transcend TS4GSH64V6E memory module 32 GB 2 x 8 GB DDR4 2666 MHz2

Transcend TS4GSH64V6E memory module 32 GB 2 x 8 GB DDR4 2666 MHz

Transcend TS4GSH64V6E. Component for: Notebook, Internal memory: 32 GB, Memory layout (modules x size): 2 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19
Manufacturer: Transcend
Availability: Out of Stock - on backorder and will be dispatched once in stock.
SKU: 5688154
Manufacturer part number: TS4GSH64V6E
MSRP: $269.00
$228.62
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.2V ± 0.06V power supply
  • High energy efficiency
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • 16 Banks (4 Bank Groups)
  • Support DBI mode
  • Support Command/Address parity detection
  • Support Data Cyclic Redundancy Check (CRC) for improved data reliability
  • On-die termination with ODT pin Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.2V ± 0.06V power supply
  • High energy efficiency
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • 16 Banks (4 Bank Groups)
  • Support DBI mode
  • Support Command/Address parity detection
  • Support Data Cyclic Redundancy Check (CRC) for improved data reliability
  • On-die termination with ODT pin Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Products specifications
Attribute nameAttribute value
Operational conditions
Operating temperature (T-T)0 - 85 °C
Features
Module configuration2048M x 8
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)2 x 8 GB
Memory ranking2
Product tags
  • (57679)
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